MOSFETs N-Channel 400V to 650V
Products specifications
Vds - Drain-Source Breakdown Voltage | 650 V |
Pd - Power Dissipation | 35 W |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 42 nC |
Transistor Polarity | N-Channel |
Tradename | SuperMESH |
Configuration | Single |
Packaging | Tube |
Mounting Style | Through Hole |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Technology | Si |
Id - Continuous Drain Current | 10 A |
Rds On - Drain-Source Resistance | 750 mOhms |