STF10N60M2

MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2

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MOSFETs N-CH 600V 0.56Ohm 7.5A MDmesh M2
Lead Time: 112 Days

Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7.5 A
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	25 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	13.5 nC
Rds On - Drain-Source Resistance	560 mOhms
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Technology	Si
Packaging	Tube

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Products specifications

Number of Channels	1 Channel
Transistor Polarity	N-Channel
Id - Continuous Drain Current	7.5 A
Vgs - Gate-Source Voltage	25 V
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	25 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Qg - Gate Charge	13.5 nC
Rds On - Drain-Source Resistance	560 mOhms
Tradename	MDmesh
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Technology	Si
Packaging	Tube