STF10N60DM2

MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package

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MOSFETs N-channel 600 V, 0.440 Ohm typ 8 A MDmesh DM2 Power MOSFET
Lead Time: 112 Days

Products specifications

Technology	Si
Pd - Power Dissipation	25 W
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	440 mOhms
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Id - Continuous Drain Current	8 A
Qg - Gate Charge	15 nC
Maximum Operating Temperature	+ 150 C
Configuration	Single
Tradename	MDmesh
Number of Channels	1 Channel
Transistor Polarity	N-Channel

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Products specifications

Technology	Si
Pd - Power Dissipation	25 W
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	3 V
Mounting Style	Through Hole
Rds On - Drain-Source Resistance	440 mOhms
Vgs - Gate-Source Voltage	25 V
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Id - Continuous Drain Current	8 A
Qg - Gate Charge	15 nC
Maximum Operating Temperature	+ 150 C
Configuration	Single
Tradename	MDmesh
Number of Channels	1 Channel
Transistor Polarity	N-Channel