MOSFET POWER MOSFET N-CH 200V
Products specifications
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 200 V |
Tradename | STripFET |
Transistor Polarity | N-Channel |
Packaging | Tube |
Rds On - Drain-Source Resistance | 12 mOhms |
Id - Continuous Drain Current | 140 A |
Pd - Power Dissipation | 500 W |