MOSFET N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh M5 Power MOSFET in a ISOTOP package
Products specifications
Vgs - Gate-Source Voltage | 25 V |
Qg - Gate Charge | 363 nC |
Id - Continuous Drain Current | 130 A |
Pd - Power Dissipation | 672 W |
Transistor Polarity | N-Channel |
Technology | Si |
Tradename | MDmesh |
Number of Channels | 1 Channel |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Maximum Operating Temperature | + 150 C |
Rds On - Drain-Source Resistance | 14 mOhms |
Configuration | Single |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 650 V |