STD9N40M2

R 1.00

MOSFET N-channel 400 V, 0.59 Ohm typ., 6 A MDmesh M2 Power MOSFET in a DPAK package

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MOSFET N-channel 400 V, 0.59 Ohm typ., 6 A MDmesh M2 Power MOSFET in a DPAK package

Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	800 mOhms
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	6 A
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	8.8 nC
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	400 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Tradename	MDmesh

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Products specifications

Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	800 mOhms
Maximum Operating Temperature	+ 150 C
Configuration	Single
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	6 A
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	8.8 nC
Pd - Power Dissipation	60 W
Vgs - Gate-Source Voltage	10 V
Vds - Drain-Source Breakdown Voltage	400 V
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Tradename	MDmesh