STD9HN65M2

R 1.00

MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

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MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

Products specifications

Maximum Operating Temperature	+ 150 C
Technology	Si
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Pd - Power Dissipation	60 W
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	11.5 nC
Rds On - Drain-Source Resistance	820 mOhms
Configuration	Single
Tradename	MDmesh
Id - Continuous Drain Current	5.5 A
Vgs - Gate-Source Voltage	25 V

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Products specifications

Maximum Operating Temperature	+ 150 C
Technology	Si
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	4 V
Vds - Drain-Source Breakdown Voltage	600 V
Channel Mode	Enhancement
Pd - Power Dissipation	60 W
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	11.5 nC
Rds On - Drain-Source Resistance	820 mOhms
Configuration	Single
Tradename	MDmesh
Id - Continuous Drain Current	5.5 A
Vgs - Gate-Source Voltage	25 V