MOSFET N-Ch 800V 0.76 Ohm 6A MDmesh K5
Products specifications
Rds On - Drain-Source Resistance | 950 mOhms |
Pd - Power Dissipation | 110 W |
Technology | Si |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Packaging | Cut Tape, MouseReel, Reel |
Configuration | Single |
Vgs - Gate-Source Voltage | 30 V |
Id - Continuous Drain Current | 6 A |
Qg - Gate Charge | 16.5 nC |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 800 V |
Tradename | MDmesh |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |