STD8N60DM2

R 1.00

MOSFET N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

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MOSFET N-channel 600 V, 550 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package

Products specifications

Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	4 nC
Pd - Power Dissipation	85 W
Id - Continuous Drain Current	8 A
Vgs - Gate-Source Voltage	30 V
Tradename	MDmesh
Transistor Polarity	N-Channel
Technology	Si
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	570 mOhms
Maximum Operating Temperature	+ 150 C

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Products specifications

Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	4 nC
Pd - Power Dissipation	85 W
Id - Continuous Drain Current	8 A
Vgs - Gate-Source Voltage	30 V
Tradename	MDmesh
Transistor Polarity	N-Channel
Technology	Si
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	570 mOhms
Maximum Operating Temperature	+ 150 C