MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
Products specifications
Vds - Drain-Source Breakdown Voltage | 800 V |
Vgs - Gate-Source Voltage | 30 V |
Packaging | Tube |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Technology | Si |
Pd - Power Dissipation | 90 W |
Configuration | Single |
Tradename | MDmesh |
Id - Continuous Drain Current | 6.5 A |
Rds On - Drain-Source Resistance | 1.05 Ohms |
Number of Channels | 1 Channel |
Qg - Gate Charge | 18 nC |
Mounting Style | Through Hole |
Channel Mode | Enhancement |
Transistor Polarity | N-Channel |