Vgs - Gate-Source Voltage | 10 V |
Vds - Drain-Source Breakdown Voltage | 650 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 6.9 nC |
Minimum Operating Temperature | - 55 C |
Vgs th - Gate-Source Threshold Voltage | 2.25 V |
Channel Mode | Enhancement |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Configuration | Single |
Rds On - Drain-Source Resistance | 0.99 Ohms |
Technology | Si |
Pd - Power Dissipation | 60 W |
Id - Continuous Drain Current | 5 A |