STD6N90K5

R 1.00

MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a DPAK package

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MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a DPAK package

Products specifications

Transistor Polarity	N-Channel
Tradename	MDmesh
Number of Channels	1 Channel
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	910 mOhms
Id - Continuous Drain Current	6 A
Vds - Drain-Source Breakdown Voltage	900 V
Qg - Gate Charge	11 nC
Vgs - Gate-Source Voltage	30 V

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Products specifications

Transistor Polarity	N-Channel
Tradename	MDmesh
Number of Channels	1 Channel
Pd - Power Dissipation	110 W
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Configuration	Single
Minimum Operating Temperature	- 55 C
Technology	Si
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	910 mOhms
Id - Continuous Drain Current	6 A
Vds - Drain-Source Breakdown Voltage	900 V
Qg - Gate Charge	11 nC
Vgs - Gate-Source Voltage	30 V