STD6N80K5

R 1.00

MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in DPAK package

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MOSFET N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in DPAK package

Products specifications

Pd - Power Dissipation	110 W
Id - Continuous Drain Current	4.5 A
Packaging	Cut Tape, MouseReel, Reel
Tradename	MDmesh
Qg - Gate Charge	7.5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.6 Ohms
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	800 V

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Products specifications

Pd - Power Dissipation	110 W
Id - Continuous Drain Current	4.5 A
Packaging	Cut Tape, MouseReel, Reel
Tradename	MDmesh
Qg - Gate Charge	7.5 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs - Gate-Source Voltage	30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Configuration	Single
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	1.6 Ohms
Technology	Si
Channel Mode	Enhancement
Vds - Drain-Source Breakdown Voltage	800 V