STD6N60DM2

R 1.00

MOSFET N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package

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MOSFET N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package

Products specifications

Pd - Power Dissipation	60 W
Tradename	MDmesh
Configuration	Single
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.1 Ohms
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3.25 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Qg - Gate Charge	6.2 nC
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	3.2 A
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si

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Products specifications

Pd - Power Dissipation	60 W
Tradename	MDmesh
Configuration	Single
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	1.1 Ohms
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3.25 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Qg - Gate Charge	6.2 nC
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	3.2 A
Vds - Drain-Source Breakdown Voltage	600 V
Technology	Si