STD60NF55LAT4

R 1.00

MOSFET N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET

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MOSFET N-channel 55 V, 0.012 Ohm, 60 A DPAK STripFET(TM) II Power MOSFET

Products specifications

Configuration	Single
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	55 V
Vgs - Gate-Source Voltage	15 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	15 mOhms
Technology	Si
Id - Continuous Drain Current	60 A
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	110 W
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Configuration	Single
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	55 V
Vgs - Gate-Source Voltage	15 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	15 mOhms
Technology	Si
Id - Continuous Drain Current	60 A
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	110 W
Minimum Operating Temperature	- 55 C
Transistor Polarity	N-Channel
Number of Channels	1 Channel