MOSFET 950 VDSS <3.5 RDS 4A ID 90W Pw
Products specifications
Id - Continuous Drain Current | 4 A |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 90 W |
Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 950 V |
Packaging | Cut Tape, MouseReel, Reel |
Vgs - Gate-Source Voltage | 30 V |
Rds On - Drain-Source Resistance | 3 Ohms |
Configuration | Single |
Qg - Gate Charge | 19 nC |
Tradename | SuperMESH |
Technology | Si |