MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A
Products specifications
Pd - Power Dissipation | 70 W |
Tradename | MDmesh |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 4.2 A |
Configuration | Single |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 26 nC |
Technology | Si |
Rds On - Drain-Source Resistance | 1.6 Ohms |
Vds - Drain-Source Breakdown Voltage | 620 V |
Maximum Operating Temperature | + 150 C |
Packaging | Reel |