STD5N60M2

R 1.00

MOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package

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MOSFET N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package

Products specifications

Pd - Power Dissipation	45 W
Qg - Gate Charge	8.5 nC
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Transistor Polarity	N-Channel
Configuration	Single
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	1.4 Ohms
Id - Continuous Drain Current	3.5 A
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Pd - Power Dissipation	45 W
Qg - Gate Charge	8.5 nC
Channel Mode	Enhancement
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Transistor Polarity	N-Channel
Configuration	Single
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	1.4 Ohms
Id - Continuous Drain Current	3.5 A
Vds - Drain-Source Breakdown Voltage	600 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel