STD5N60DM2

R 1.00

MOSFET N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

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MOSFET N-channel 600 V, 1.38 Ohm typ., 3.5 A MDmesh DM2 Power MOSFET in a DPAK package

Products specifications

Vgs - Gate-Source Voltage	30 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	3.5 A
Qg - Gate Charge	8.6 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Rds On - Drain-Source Resistance	1.38 Ohms
Pd - Power Dissipation	45 W

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Products specifications

Vgs - Gate-Source Voltage	30 V
Transistor Polarity	N-Channel
Id - Continuous Drain Current	3.5 A
Qg - Gate Charge	8.6 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Technology	Si
Vgs th - Gate-Source Threshold Voltage	3 V
Tradename	MDmesh
Vds - Drain-Source Breakdown Voltage	600 V
Packaging	Cut Tape, MouseReel, Reel
Configuration	Single
Rds On - Drain-Source Resistance	1.38 Ohms
Pd - Power Dissipation	45 W