STD52P3LLH6

R 1.00

MOSFET P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a DPAK package

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MOSFET P-channel 30 V, 0.01 Ohm typ., 52 A STripFET H6 Power MOSFET in a DPAK package

Products specifications

Vgs - Gate-Source Voltage	20 V
Configuration	Single
Rds On - Drain-Source Resistance	10 mOhms
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Qg - Gate Charge	33 nC
Pd - Power Dissipation	70 W
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	52 A
Vgs th - Gate-Source Threshold Voltage	2.5 V

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Products specifications

Vgs - Gate-Source Voltage	20 V
Configuration	Single
Rds On - Drain-Source Resistance	10 mOhms
Channel Mode	Enhancement
Transistor Polarity	P-Channel
Qg - Gate Charge	33 nC
Pd - Power Dissipation	70 W
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Tradename	STripFET
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	52 A
Vgs th - Gate-Source Threshold Voltage	2.5 V