STD4NK100Z

R 1.00

MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperMESH Power MOSFET in a DPAK package

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MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperMESH Power MOSFET in a DPAK package

Products specifications

Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	1 kV
Technology	Si
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	6.8 Ohms
Channel Mode	Enhancement
Number of Channels	1 Channel
Tradename	SuperMESH
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	2.2 A
Pd - Power Dissipation	90 W
Qg - Gate Charge	18 nC
Qualification	AEC-Q101
Vgs - Gate-Source Voltage	30 V
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	4.5 V

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Products specifications

Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	1 kV
Technology	Si
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	6.8 Ohms
Channel Mode	Enhancement
Number of Channels	1 Channel
Tradename	SuperMESH
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	2.2 A
Pd - Power Dissipation	90 W
Qg - Gate Charge	18 nC
Qualification	AEC-Q101
Vgs - Gate-Source Voltage	30 V
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	4.5 V