MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3
Products specifications
Technology | Si |
Pd - Power Dissipation | 70 W |
Vgs - Gate-Source Voltage | 3 V |
Transistor Polarity | N-Channel |
Qg - Gate Charge | 14 nC |
Configuration | Single |
Rds On - Drain-Source Resistance | 1.95 Ohms |
Number of Channels | 1 Channel |
Tradename | MDmesh |
Packaging | Cut Tape, MouseReel, Reel |
Id - Continuous Drain Current | 3.8 A |
Vds - Drain-Source Breakdown Voltage | 525 V |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Maximum Operating Temperature | + 150 C |