STD4LN80K5

R 1.00

MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package

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MOSFET N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a DPAK package

Products specifications

Technology	Si
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	3 A
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	3.7 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	2.1 Ohms
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	800 V
Pd - Power Dissipation	60 W
Tradename	MDmesh

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Products specifications

Technology	Si
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, Reel
Id - Continuous Drain Current	3 A
Configuration	Single
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	3.7 nC
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	30 V
Rds On - Drain-Source Resistance	2.1 Ohms
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	800 V
Pd - Power Dissipation	60 W
Tradename	MDmesh