STD40P3LLH6

R 1.00

MOSFET P-channel -30 V, 12 mOhm typ., -40 A STripFET H6 Power MOSFET in a DPAK package

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MOSFET P-channel -30 V, 12 mOhm typ., -40 A STripFET H6 Power MOSFET in a DPAK package

Products specifications

Number of Channels	1 Channel
Technology	Si
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	40 A
Configuration	Single
Rds On - Drain-Source Resistance	12 mOhms
Pd - Power Dissipation	60 W
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Packaging	Cut Tape, MouseReel, Reel
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	24 nC
Maximum Operating Temperature	+ 175 C

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Products specifications

Number of Channels	1 Channel
Technology	Si
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.5 V
Id - Continuous Drain Current	40 A
Configuration	Single
Rds On - Drain-Source Resistance	12 mOhms
Pd - Power Dissipation	60 W
Vds - Drain-Source Breakdown Voltage	30 V
Transistor Polarity	P-Channel
Packaging	Cut Tape, MouseReel, Reel
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	24 nC
Maximum Operating Temperature	+ 175 C