MOSFET Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package
Products specifications
Vgs - Gate-Source Voltage | 30 V |
Pd - Power Dissipation | 45 W |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 4.3 Ohms |
Qg - Gate Charge | 3.4 nC |
Id - Continuous Drain Current | 2 A |
Number of Channels | 1 Channel |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 950 V |
Tradename | MDmesh |
Qualification | AEC-Q101 |
Configuration | Single |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |