MOSFET N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS
Products specifications
Rds On - Drain-Source Resistance | 2.5 Ohms |
Vds - Drain-Source Breakdown Voltage | 620 V |
Tradename | SuperMESH |
Configuration | Single |
Pd - Power Dissipation | 45 W |
Qg - Gate Charge | 17 nC |
Technology | Si |
Id - Continuous Drain Current | 2.5 A |
Vgs th - Gate-Source Threshold Voltage | 3.75 V |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vgs - Gate-Source Voltage | 30 V |
Packaging | Cut Tape, MouseReel, Reel |