STD37P3H6AG

R 1.00

MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -49 A STripFET H6 Power MOSFET in a DPAK package

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MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -49 A STripFET H6 Power MOSFET in a DPAK package

Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Technology	Si
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	49 A
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	15 mOhms
Pd - Power Dissipation	60 W
Number of Channels	1 Channel
Qualification	AEC-Q101
Packaging	Cut Tape, MouseReel, Reel
Tradename	STripFET
Qg - Gate Charge	30.6 nC
Vgs - Gate-Source Voltage	20 V

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Products specifications

Configuration	Single
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Technology	Si
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	49 A
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	15 mOhms
Pd - Power Dissipation	60 W
Number of Channels	1 Channel
Qualification	AEC-Q101
Packaging	Cut Tape, MouseReel, Reel
Tradename	STripFET
Qg - Gate Charge	30.6 nC
Vgs - Gate-Source Voltage	20 V