STD35P6LLF6

R 1.00

MOSFET P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package

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MOSFET P-channel 60 V, 0.025 Ohm typ., 35 A STripFET F6 Power MOSFET in a DPAK package

Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Rds On - Drain-Source Resistance	28 mOhms
Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	P-Channel
Qg - Gate Charge	30 nC
Pd - Power Dissipation	70 W
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Technology	Si
Tradename	STripFET
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	35 A
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Vgs th - Gate-Source Threshold Voltage	1 V
Rds On - Drain-Source Resistance	28 mOhms
Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	P-Channel
Qg - Gate Charge	30 nC
Pd - Power Dissipation	70 W
Vgs - Gate-Source Voltage	10 V
Minimum Operating Temperature	- 55 C
Technology	Si
Tradename	STripFET
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 175 C
Id - Continuous Drain Current	35 A
Channel Mode	Enhancement
Configuration	Single