MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET
Products specifications
Number of Channels | 1 Channel |
Tradename | SuperMESH |
Vgs - Gate-Source Voltage | 30 V |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 4.5 Ohms |
Vgs th - Gate-Source Threshold Voltage | 4.5 V |
Packaging | Cut Tape, MouseReel, Reel |
Qg - Gate Charge | 12 nC |
Transistor Polarity | N-Channel |
Pd - Power Dissipation | 45 W |
Configuration | Single |
Id - Continuous Drain Current | 2 A |
Technology | Si |
Vds - Drain-Source Breakdown Voltage | 600 V |