STD25NF20

MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET

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MOSFETs N-Ch 200V 0.10Ohm 18 A StripFET FET
Lead Time: 182 Days

Products specifications

Rds On - Drain-Source Resistance	125 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Technology	Si
Pd - Power Dissipation	110 W
Vgs - Gate-Source Voltage	10 V
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Tradename	STripFET
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	18 A
Transistor Polarity	N-Channel
Qg - Gate Charge	28 nC
Channel Mode	Enhancement
Configuration	Single

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Products specifications

Rds On - Drain-Source Resistance	125 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Minimum Operating Temperature	- 55 C
Technology	Si
Pd - Power Dissipation	110 W
Vgs - Gate-Source Voltage	10 V
Maximum Operating Temperature	+ 175 C
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	1 Channel
Tradename	STripFET
Qualification	AEC-Q101
Vds - Drain-Source Breakdown Voltage	200 V
Id - Continuous Drain Current	18 A
Transistor Polarity	N-Channel
Qg - Gate Charge	28 nC
Channel Mode	Enhancement
Configuration	Single