STD1NK60-1

MOSFET N-Ch 600 Volt 1.0 A

Availability: 4210 in stock

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R 17.02

R 12.17

R 11.31

R 11.09

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MOSFETs N-Ch 600 Volt 1.0 A
Lead Time: 91 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	8 Ohms
Pd - Power Dissipation	3 W
Configuration	Single
Id - Continuous Drain Current	1 A
Vgs - Gate-Source Voltage	30 V
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Mounting Style	Through Hole

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Products specifications

Vds - Drain-Source Breakdown Voltage	600 V
Rds On - Drain-Source Resistance	8 Ohms
Pd - Power Dissipation	3 W
Configuration	Single
Id - Continuous Drain Current	1 A
Vgs - Gate-Source Voltage	30 V
Technology	Si
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Packaging	Tube
Mounting Style	Through Hole