STD1HN60K3

MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET

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MOSFETs N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET
Lead Time: 91 Days

Products specifications

Technology	Si
Pd - Power Dissipation	27 W
Rds On - Drain-Source Resistance	6.7 Ohms
Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	1.2 A
Tradename	SuperMESH
Qg - Gate Charge	9.5 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.75 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Technology	Si
Pd - Power Dissipation	27 W
Rds On - Drain-Source Resistance	6.7 Ohms
Channel Mode	Enhancement
Number of Channels	1 Channel
Id - Continuous Drain Current	1.2 A
Tradename	SuperMESH
Qg - Gate Charge	9.5 nC
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Vgs th - Gate-Source Threshold Voltage	3.75 V
Transistor Polarity	N-Channel
Vgs - Gate-Source Voltage	30 V
Packaging	Cut Tape, MouseReel, Reel