STD180N4F6

MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power MOSFET in a DPAK package

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MOSFETs N-channel 40 V, 3.8 mOhm typ 120 A STripFET F6 Power MOSFET
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Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	130 W
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	2.5 mOhms
Qg - Gate Charge	130 nC
Technology	Si
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	80 A

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Products specifications

Number of Channels	1 Channel
Channel Mode	Enhancement
Maximum Operating Temperature	+ 175 C
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	20 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	130 W
Minimum Operating Temperature	- 55 C
Tradename	STripFET
Vgs th - Gate-Source Threshold Voltage	3 V
Rds On - Drain-Source Resistance	2.5 mOhms
Qg - Gate Charge	130 nC
Technology	Si
Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	80 A