MOSFETs Automotive-grade N-channel 500 V, 0.336 Ohm typ 10 A MDmesh M2 Power MOSFET
Products specifications
Qualification | AEC-Q101 |
Number of Channels | 1 Channel |
Configuration | Single |
Transistor Polarity | N-Channel |
Channel Mode | Enhancement |
Vds - Drain-Source Breakdown Voltage | 500 V |
Pd - Power Dissipation | 85 W |
Id - Continuous Drain Current | 10 A |
Vgs - Gate-Source Voltage | 30 V |
Technology | Si |
Rds On - Drain-Source Resistance | 336 mOhms |
Qg - Gate Charge | 13 nC |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |