MOSFETs Automotive-grade N-channel 500 V, 0.28 Ohm typ 12 A MDmesh II Power MOSFET
Lead Time: 112 Days
Products specifications
Rds On - Drain-Source Resistance | 280 mOhms |
Vgs - Gate-Source Voltage | 25 V |
Tradename | MDmesh |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Pd - Power Dissipation | 90 W |
Vds - Drain-Source Breakdown Voltage | 500 V |
Qg - Gate Charge | 27 nC |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Id - Continuous Drain Current | 12 A |
Qualification | AEC-Q101 |
Maximum Operating Temperature | + 150 C |
Configuration | Single |