MOSFETs Automotive-grade N-channel 500 V, 0.28 Ohm typ 12 A MDmesh II Power MOSFET
Lead Time: 112 Days
Products specifications
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - Continuous Drain Current | 12 A |
Number of Channels | 1 Channel |
Maximum Operating Temperature | + 150 C |
Vgs - Gate-Source Voltage | 2 V |
Configuration | Single |
Rds On - Drain-Source Resistance | 900 mOhms |
Qg - Gate Charge | 42 nC |
Pd - Power Dissipation | 90 W |
Packaging | Cut Tape, MouseReel, Reel |
Tradename | MDmesh |
Technology | Si |
Qualification | AEC-Q101 |
Vgs th - Gate-Source Threshold Voltage | 4 V |