MOSFET N-channel 500 V 11 A Fdmesh
Products specifications
Configuration | Single |
Vgs - Gate-Source Voltage | 10 V |
Maximum Operating Temperature | + 150 C |
Id - Continuous Drain Current | 11 A |
Qg - Gate Charge | 30 nC |
Transistor Polarity | N-Channel |
Number of Channels | 1 Channel |
Technology | Si |
Channel Mode | Enhancement |
Pd - Power Dissipation | 100 W |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vds - Drain-Source Breakdown Voltage | 500 V |
Packaging | Cut Tape, MouseReel, Reel |
Rds On - Drain-Source Resistance | 380 mOhms |