STD12N60DM2AG

MOSFET

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MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET

Products specifications

Rds On - Drain-Source Resistance	440 mOhms
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	10 A
Qg - Gate Charge	14.5 nC
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Packaging	Cut Tape, Reel
Technology	Si
Qualification	AEC-Q101
Pd - Power Dissipation	110 W

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Products specifications

Rds On - Drain-Source Resistance	440 mOhms
Transistor Polarity	N-Channel
Vgs th - Gate-Source Threshold Voltage	3 V
Number of Channels	1 Channel
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	10 A
Qg - Gate Charge	14.5 nC
Configuration	Single
Vds - Drain-Source Breakdown Voltage	650 V
Packaging	Cut Tape, Reel
Technology	Si
Qualification	AEC-Q101
Pd - Power Dissipation	110 W