STD120N4LF6

MOSFET N-Ch 40V 3.1 mOhm 80A STripFET VI Deep

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MOSFETs N-Ch 40V 3.1 mOhm 80A STripFET VI Deep
Lead Time: 182 Days

Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	80 nC
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	3.6 mOhms
Id - Continuous Drain Current	80 A
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Pd - Power Dissipation	110 W
Qualification	AEC-Q101
Technology	Si

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Products specifications

Transistor Polarity	N-Channel
Qg - Gate Charge	80 nC
Vds - Drain-Source Breakdown Voltage	40 V
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	3.6 mOhms
Id - Continuous Drain Current	80 A
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	3 V
Pd - Power Dissipation	110 W
Qualification	AEC-Q101
Technology	Si