STD11N60M2-EP

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MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package

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MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a DPAK package

Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Technology	Si
Id - Continuous Drain Current	7.5 A
Pd - Power Dissipation	85 W
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	12.4 nC
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	550 mOhms

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Products specifications

Configuration	Single
Vds - Drain-Source Breakdown Voltage	600 V
Tradename	MDmesh
Technology	Si
Id - Continuous Drain Current	7.5 A
Pd - Power Dissipation	85 W
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	12.4 nC
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	550 mOhms