STD11N60DM2

MOSFET N-channel 600 V, 0.370 Ohm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

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MOSFETs N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
Lead Time: 112 Days

Products specifications

Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	16.5 nC
Id - Continuous Drain Current	10 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Tradename	MDmesh
Rds On - Drain-Source Resistance	370 mOhms
Vgs - Gate-Source Voltage	25 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	110 W
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V

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Products specifications

Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	16.5 nC
Id - Continuous Drain Current	10 A
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Tradename	MDmesh
Rds On - Drain-Source Resistance	370 mOhms
Vgs - Gate-Source Voltage	25 V
Technology	Si
Vds - Drain-Source Breakdown Voltage	600 V
Pd - Power Dissipation	110 W
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3 V