STD110N8F6

MOSFET N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package

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MOSFETs N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET
Lead Time: 182 Days

Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	6.5 mOhms
Pd - Power Dissipation	167 W
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	150 nC
Vgs th - Gate-Source Threshold Voltage	4.5 V
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	80 A
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	80 V
Configuration	Single
Tradename	STripFET
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Technology	Si

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Products specifications

Channel Mode	Enhancement
Number of Channels	1 Channel
Rds On - Drain-Source Resistance	6.5 mOhms
Pd - Power Dissipation	167 W
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	150 nC
Vgs th - Gate-Source Threshold Voltage	4.5 V
Vgs - Gate-Source Voltage	20 V
Id - Continuous Drain Current	80 A
Packaging	Cut Tape, MouseReel, Reel
Vds - Drain-Source Breakdown Voltage	80 V
Configuration	Single
Tradename	STripFET
Transistor Polarity	N-Channel
Minimum Operating Temperature	- 55 C
Technology	Si