STD10P6F6

MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate

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MOSFETs P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat
Lead Time: 182 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	P-Channel
Rds On - Drain-Source Resistance	160 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	10 V
Technology	Si
Pd - Power Dissipation	35 W
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	6.4 nC
Tradename	STripFET
Id - Continuous Drain Current	10 A
Configuration	Single
Channel Mode	Enhancement

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Products specifications

Vds - Drain-Source Breakdown Voltage	60 V
Transistor Polarity	P-Channel
Rds On - Drain-Source Resistance	160 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Vgs - Gate-Source Voltage	10 V
Technology	Si
Pd - Power Dissipation	35 W
Number of Channels	1 Channel
Packaging	Cut Tape, MouseReel, Reel
Maximum Operating Temperature	+ 175 C
Qg - Gate Charge	6.4 nC
Tradename	STripFET
Id - Continuous Drain Current	10 A
Configuration	Single
Channel Mode	Enhancement