STD10NM60N

MOSFET N-channel 600 V Mdmesh 10A

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MOSFETs N-channel 600 V Mdmesh 10A
Lead Time: 112 Days

Products specifications

Number of Channels	1 Channel
Qg - Gate Charge	19 nC
Pd - Power Dissipation	70 W
Id - Continuous Drain Current	10 A
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Technology	Si
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	550 mOhms
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Number of Channels	1 Channel
Qg - Gate Charge	19 nC
Pd - Power Dissipation	70 W
Id - Continuous Drain Current	10 A
Vds - Drain-Source Breakdown Voltage	600 V
Configuration	Single
Technology	Si
Tradename	MDmesh
Vgs - Gate-Source Voltage	25 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Rds On - Drain-Source Resistance	550 mOhms
Transistor Polarity	N-Channel
Packaging	Cut Tape, MouseReel, Reel