STD10N60DM2

MOSFET N-channel 600 V, 0.26 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP package

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MOSFETs N-channel 600 V, 0.440 Ohm typ 8 A MDmesh DM2 Power MOSFET
Lead Time: 112 Days

Products specifications

Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Qg - Gate Charge	15 nC
Pd - Power Dissipation	109 W
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Id - Continuous Drain Current	8 A
Tradename	MDmesh
Rds On - Drain-Source Resistance	440 mOhms

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Products specifications

Vgs - Gate-Source Voltage	25 V
Vgs th - Gate-Source Threshold Voltage	3 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	600 V
Number of Channels	1 Channel
Qg - Gate Charge	15 nC
Pd - Power Dissipation	109 W
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Technology	Si
Configuration	Single
Id - Continuous Drain Current	8 A
Tradename	MDmesh
Rds On - Drain-Source Resistance	440 mOhms