MOSFET Automotive-grade N-channel 100 V, 5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package
Products specifications
Technology | Si |
Transistor Polarity | N-Channel |
Qualification | AEC-Q101 |
Vds - Drain-Source Breakdown Voltage | 100 V |
Rds On - Drain-Source Resistance | 5 mOhms |
Pd - Power Dissipation | 125 W |
Channel Mode | Enhancement |
Maximum Operating Temperature | + 175 C |
Vgs - Gate-Source Voltage | 20 V |
Minimum Operating Temperature | - 55 C |
Number of Channels | 1 Channel |
Configuration | Single |
Id - Continuous Drain Current | 80 A |
Vgs th - Gate-Source Threshold Voltage | 1 V |
Tradename | STripFET |
Qg - Gate Charge | 73 nC |