MOSFET N-Ch 650 Volt 5 Amp
Products specifications
Technology | Si |
Vgs - Gate-Source Voltage | 30 V |
Maximum Operating Temperature | + 150 C |
Number of Channels | 1 Channel |
Tradename | MDmesh |
Vds - Drain-Source Breakdown Voltage | 600 V |
Pd - Power Dissipation | 100 W |
Packaging | Cut Tape, MouseReel, Reel |
Minimum Operating Temperature | - 55 C |
Transistor Polarity | N-Channel |
Id - Continuous Drain Current | 8 A |
Channel Mode | Enhancement |
Rds On - Drain-Source Resistance | 900 mOhms |
Configuration | Single |