STB80N4F6AG

R 1.00

MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

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MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

Products specifications

Transistor Polarity	N-Channel
Pd - Power Dissipation	70 W
Rds On - Drain-Source Resistance	6 mOhms
Qualification	AEC-Q101
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	36 nC
Id - Continuous Drain Current	80 A
Channel Mode	Enhancement

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Products specifications

Transistor Polarity	N-Channel
Pd - Power Dissipation	70 W
Rds On - Drain-Source Resistance	6 mOhms
Qualification	AEC-Q101
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Tradename	STripFET
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V
Technology	Si
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	36 nC
Id - Continuous Drain Current	80 A
Channel Mode	Enhancement