MOSFET N-Ch 200V 0.019 61A Mdmesh V
Products specifications
Id - Continuous Drain Current | 61 A |
Rds On - Drain-Source Resistance | 23 mOhms |
Vds - Drain-Source Breakdown Voltage | 200 V |
Technology | Si |
Transistor Polarity | N-Channel |
Configuration | Single |
Number of Channels | 1 Channel |
Tradename | MDmesh |
Qg - Gate Charge | 104 nC |
Packaging | Cut Tape, MouseReel, Reel |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 190 W |
Vgs - Gate-Source Voltage | 25 V |
Vgs th - Gate-Source Threshold Voltage | 5 V |