STB46NF30

R 1.00

MOSFET N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package

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MOSFET N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II Power MOSFET in a D2PAK package

Products specifications

Configuration	Single
Technology	Si
Pd - Power Dissipation	300 W
Tradename	STripFET
Qg - Gate Charge	90 nC
Vgs - Gate-Source Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Qualification	AEC-Q101
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	300 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	63 mOhms
Number of Channels	1 Channel
Id - Continuous Drain Current	42 A

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Products specifications

Configuration	Single
Technology	Si
Pd - Power Dissipation	300 W
Tradename	STripFET
Qg - Gate Charge	90 nC
Vgs - Gate-Source Voltage	20 V
Packaging	Cut Tape, MouseReel, Reel
Qualification	AEC-Q101
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	300 V
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Maximum Operating Temperature	+ 175 C
Rds On - Drain-Source Resistance	63 mOhms
Number of Channels	1 Channel
Id - Continuous Drain Current	42 A